ALGAINP GAP LIGHT-EMITTING-DIODES FABRICATED BY WAFER DIRECT BONDING TECHNOLOGY/

An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bon ding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60 mcd/S-r a t an operation current of 20 mA. It is about two times brighter than t he conventional device with absorbing GaAs substrate. The large lattic e constant mismatch (3.6%) between wafer-bonded GaP substrate and GaIn P did not degrade the device characteristics.