PROPERTIES OF S IMPLANTED IN GAAS ACTIVATED USING AS-DOPED A-SI-H ENCAPSULANT FILMS

Implantation of S+ ions into GaAs was performed under the conditions o f energy of 120 keV and doses of 3 x 10(13) -1 X 10(15) cm(-2). The Ga As was capped with an 80 nm thick a-Si:H film into which As was doped at a concentration of 2 x 10(20) cm(-3). Then, the samples were anneal ed in Ar gas at 850-1000 degrees C for 15 min. The As-doped a-Si:H fil m did not crack even after it was heated to a high temperature such as 1000 degrees C. The sheet carrier concentrations were approximately p roportional to the square root of the implantation dose. The diffusivi ty of S can be represented by the equation De = D-1[K'Q(2)/(1 + K'Q(2) )], where K' is a constant,Q is the implantation dose, and D-1 is the diffusivity of a mobile complex.