BACKWARD DIODE CHARACTERISTICS OF P-TYPE DIAMOND N-TYPE SILICON HETEROJUNCTION DIODES

Rectification characteristics obtained for p-type diamond/n-type silic on heterojunctions have been studied. The current-voltage (I-V) charac teristics of p-n heterojunctions show the same manner of rectification as in a backward diode. Forward current depends on both the concentra tion of boron atoms in polycrystalline diamond and the ambient tempera ture. The temperature dependence of I-V characteristics indicated that forward and reverse currents are mainly ascribed to diffusion and tun nelling currents, respectively. This current flow mechanism is peculia r to a backward diode. A simplified energy band model was proposed to explain the current transport mechanism in these heterojunctions. The experimental results can be explained with the aid of the proposed ene rgy band model.