ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION TITANIUM NITRIDE FILMFABRICATED USING TETRAKIS-DIMETHYLAMINO-TITANIUM FOR BARRIER METAL APPLICATION IN SUB-HALF-MICRON TECHNOLOGY

Enhanced metalorganic chemical vapor deposition (MOCVD) titanium nitri de (TiN:C) film with low resistivity (< 700 mu Omega . cm) has been fa bricated by thermal decomposition of tetrakis-dimethylamino-titanium ( TDMAT; Ti[N(CH3)(2)](4)) Enhancement is carried out by in-situ N-2 pla sma treatment of as-deposited TiN:C film and the enhanced TiN:C film h as good stability: less than 4% increase in film resistivity after exp osure to air for 24 days. The amount of oxygen absorbed in this enhanc ed TiN:C film after air exposure, determined by Auger electron spectro scopy (AES) was significantly reduced. This enhanced MOCVD TiN:C film has been successfully applied to sub-half-micron devices. A void-tree tungsten plug (W plug) for sub-half-micron holes can be achieved. Good barrier performance and low contact/via resistance have also been dem onstrated.