PHOTOLUMINESCENCE SPECTRA OF N-GASE LAYERED SEMICONDUCTOR-DOPED WITH SN

Radiative recombination mechanisms in n-GaSe doped with Sn have been i nvestigated through photoluminescence (PL) measurements. For samples d oped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL inten sity, peak energy and full width at half-maximum are characterized usi ng the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.