We propose new switching gates based on layered structures of high-T-c
superconductive single crystals. The operation principle of the propo
sed gate is similar to that of Josephson junction switches but its siz
e is smaller and its speed is faster than those of Josephson junctions
. The proposed switching gates consist of a gate current pass parallel
to the c-axis of the single crystal. The gate current is controlled b
y a magnetic flux induced by input current. The area of the gate is le
ss than 1 mu m(2). The minimum switching time tau(s) is estimated as c
ongruent to 10(-13) s. The gate can be used as a memory cell and a flu
x flow amplifier. As the proposed gate uses a single crystal the noise
figure should be low if the crystal used is of high quality.