SINGLE-CRYSTAL SWITCHING GATES FABRICATED USING CUPRATE SUPERCONDUCTORS

Citation
T. Yamashita et M. Tachiki, SINGLE-CRYSTAL SWITCHING GATES FABRICATED USING CUPRATE SUPERCONDUCTORS, JPN J A P 1, 35(8), 1996, pp. 4314-4317
Citations number
12
Categorie Soggetti
Physics, Applied
Volume
35
Issue
8
Year of publication
1996
Pages
4314 - 4317
Database
ISI
SICI code
Abstract
We propose new switching gates based on layered structures of high-T-c superconductive single crystals. The operation principle of the propo sed gate is similar to that of Josephson junction switches but its siz e is smaller and its speed is faster than those of Josephson junctions . The proposed switching gates consist of a gate current pass parallel to the c-axis of the single crystal. The gate current is controlled b y a magnetic flux induced by input current. The area of the gate is le ss than 1 mu m(2). The minimum switching time tau(s) is estimated as c ongruent to 10(-13) s. The gate can be used as a memory cell and a flu x flow amplifier. As the proposed gate uses a single crystal the noise figure should be low if the crystal used is of high quality.