Zp. Su et al., MECHANISMS OF PHOTOLUMINESCENCE UP-CONVERSION AT THE GAAS (ORDERED) GAINP2 INTERFACE/, Solid state communications, 99(12), 1996, pp. 933-936
F.A.J.M. Driessen [Appl. Phys. Lett. 67, 1995, 2813] recently reported
emission from GaAs/(partially ordered) GaInP2 quantum wells grown on
GaAs when the excitation photon energy was above the band gap of GaAs.
We found that such upconverted emission could be excited from partial
ly ordered GaInP2 grown on GaAs even when the photon energy was below
the band gap of GaAs. Auger processes are found to be inadequate in ex
plaining our results. Instead we propose a two-step two-photon excitat
ion mechanism together with a model in which the GaAs and GaInP2 condu
ction bands are almost degenerate. Copyright (C) 1996 Elsevier Science
Ltd