Nm. Balzaretti et Jah. Dajornada, PRESSURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF DIAMOND, CUBIC SILICON-CARBIDE AND CUBIC BORON-NITRIDE, Solid state communications, 99(12), 1996, pp. 943-948
The pressure dependence of the refractive index of diamond, cubic boro
n nitride and cubic silicon carbide, was measured up to 9 GPa by an in
terferometric method using the diamond anvil cell. A least-square fit
yields the following values for (1/n) (dn/dP): -3.6 x 10(-4) GPa(-1) f
or diamond, -3.2 x 10(-4) GPa(-1) for c-BN and, for 3C-SiC, -8.3 x 10(
-4) GPa(-1). These results were used to investigate, for the first tim
e under pressure, general empirical relationships between refractive i
ndex and energy gap found in the literature. The volume dependence of
the electronic polarizability, alpha, of these compounds was determine
d through the Lorentz-Lorenz approach. The obtained linear behavior of
alpha for the three cases was correlated to previous results for the
pressure dependence of the transverse effective charge, e(T). Copyrig
ht (C) 1996 Elsevier Science Ltd