Sh. Paek et al., CHARACTERISTICS OF SRTIO3 THIN-FILMS DEPOSITED UNDER VARIOUS OXYGEN PARTIAL PRESSURES, Journal of Materials Science, 31(16), 1996, pp. 4357-4362
SrTiO3 thin films were deposited by rf-magnetron sputtering under vari
ous sputtering conditions followed by conventional furnace annealing a
t 600 and 700 degrees C. The amorphous SrTiO3 thin films crystallized
into polycrystals at 600 degrees C. The leakage current of the SrTiO3
thin films decreased with increasing oxygen partial pressure in the sp
uttering gas. On the contrary, the dielectric constant increased with
increasing the oxygen content in the sputtering gas. The leakage curre
nt and dielectric constant increased with increasing substrate tempera
ture and post-annealing temperature. The ratio of Sr:Ti approached 1:1
with increasing oxygen content in the sputtering gas and substrate te
mperature during deposition. The oxygen content in the film decreased
with increasing the substrate temperature. The capacitance-voltage (C-
V) curves showed that the capacitance was nearly independent of the ap
plied voltage. Scanning electron microscopy (SEM) micrographs showed t
hat interdiffusion between the bottom electrode (Pt) and the buffer la
yer (Ti) occurred during post-annealing, but that the interface betwee
n SrTiO3 and Pt was stable.