1-W SIGE POWER HBTS FOR MOBILE COMMUNICATION

Silicon Germanium (SiGe) power heterobipolar transistors (HBT's) with 10 and 60 x 2.25 x 15 mu m(2) emitter fingers, respectively, were fabr icated in a completely passivated manner by a production-like process, Each emitter stripe of the big transistors includes a ballast resista nce of 6 Omega. Class A load pull measurements at 1.9 GHz revealed a p ower-added efficiency (PAE) of 44% at 1-W rf output power for the 60-s tripes transistor, In addition, a ten-finger driver HBT reached a PAE of 72% at 0.9 GHz for class A/B operation.