AN ALL PHOSPHIDE 625 NM SURFACE-EMITTING RESONANT-CAVITY LED

A resonant cavity LED has been fabricated using (AlyGa1-y)(0.52)In0.48 P (0 less than or equal to y less than or equal to 1) lattice matched to GaAs. Three 7.5 nm Ga0.52In0.48P quantum wells are located at the c entre of a one wavelength thick microcavity. A 40 period, silicon dope d, 99% reflective and a 10 period, beryllium doped, 90% reflective (Al 0.3Ga0.7)(0.52)In0.48P-AlInP Distributed Bragg Reflector (DBR) mirrors are sandwiched either side of the active region. Significant linewidt h narrowing at 625 nm was observed. The electroluminescence linewidth of the RCLED was 9.3 meV corresponding to a reduction by over a factor of four compared to a conventional LED. For a 40 mu m diameter device a similar to 2 V turn-on was observed.