The study of the luminescence properties of rare earth doped systems h
istorically focuses on systems which exhibit strong luminescence. More
recently, extensive studies on materials with high quantum efficiency
are in part motivated by the search for new phosphor and scintillator
materials. However, a thorough study of certain systems which show ve
ry low quantum yield will certainly lead to a better understanding of
phosphor materials and rare earth systems in general. As an example of
recent studies which address both the fundamental question of relaxat
ion processes in rare earth doped systems and phosphor applications we
present studies on cerium-doped lutetium oxide crystals which are cha
racterized by a complete quenching of the 5d-4f luminescence and compa
re its optical properties to that of very efficient cerium doped phosp
hor material, lutetium oxyorthosilicate. To find the mechanisms which
lead to the different quantum efficiency in these systems, extensive a
bsorption, photoexcitation and photoconductivity studies were performe
d on single crystals. We demonstrate that the radically different emis
sion properties of the investigated systems originate in small but cru
cial differences in the location of the emitting 5d level of the ceriu
m ion with respect to the conduction band of the host - a general resu
lt which can be applied to a broad range of materials.