M. Ehsanian et B. Kaminska, A BICMOS WIDE-BAND OPERATIONAL-AMPLIFIER WITH 900 MHZ GAIN-BANDWIDTH AND 90 DB DC GAIN, Analog integrated circuits and signal processing, 11(1), 1996, pp. 63-71
A fully differential operational amplifier has been designed and fabri
cated for a novel high resolution and high frequency analog-to-digital
converter(>12-bit). The amplifier mainly consists of folded cascode s
tructure with current source as output loads and common-mode feedback
circuits. The technique of feedforward compensation is used in order t
o improve the settling time and gain bandwidth (GBW) of this amplifier
. This amplifier is integrated in 0.8 mm BiCMOS process with an active
die area of 0.1 mm(2). The DC gain of this amplifier is 90 dB. The GB
W and phase margin of this amplifier is 900 MHz and 47 degrees, respec
tively. The power dissipation is minimized by using BiCMOS technology
and is about 25 mW for 2 pF load capacitance. This level of performanc
e is competitive with CMOS and BiCMOS operational amplifier circuits p
reviously reported by nearly two orders of magnitude.