SUBMICRON NB-AL AL OXIDE-NB TUNNEL-JUNCTIONS SANDWICHED BETWEEN AL FILMS/

Authors
MAIER D ROTHERMEL H GUNDLACH KH ZIMMERMANN R
Citation
D. Maier et al., SUBMICRON NB-AL AL OXIDE-NB TUNNEL-JUNCTIONS SANDWICHED BETWEEN AL FILMS/, Physica. C, Superconductivity, 268(1-2), 1996, pp. 26-40
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
268
Issue
1-2
Year of publication
1996
Pages
26 - 40
Database
ISI
SICI code
0921-4534(1996)268:1-2<26:SNAOTS>2.0.ZU;2-3
Abstract
A process has been developed to embed Nb-Al/Al oxide-Nb junctions in p lanar structures of Al films. The submicron junctions are defined by p hotoresist lines. Motivation for this effort is a possible application of Nb junctions confined between normal conducting Al films as mixers above 700 GHz where Nb films loose their superconductive properties a cid tuning circuits made out of Nb therefore exhibit losses. First mix er results at 815 GHz are presented.