PROPOSAL AND ANALYSIS OF VERY SHORT-CHANNEL FIELD-EFFECT TRANSISTOR USING VERTICAL TUNNELING WITH NEW HETEROSTRUCTURES ON SILICON

We propose and analyze a very short channel tunneling field effect tra nsistor using new heterostructures (CoSi2/Si/CdF2/CaF2) lattice-matche d to Si substrate. In device operation, drain current from source (CoS i2) to drain (CoSi2) through tunneling barriers (Si) and channel (CdF2 ) is controlled by gate electric field applied to the barrier between source and channel through gate insulator (CaF2). Theoretical analysis shows that this transistor has characteristics similar to those of co nventional metal- oxide-semiconductor field effect transistors even wi th the channel lengths of 20 nm and 5 nm.