W. Saitoh et al., PROPOSAL AND ANALYSIS OF VERY SHORT-CHANNEL FIELD-EFFECT TRANSISTOR USING VERTICAL TUNNELING WITH NEW HETEROSTRUCTURES ON SILICON, JPN J A P 2, 35(9A), 1996, pp. 1104-1106
We propose and analyze a very short channel tunneling field effect tra
nsistor using new heterostructures (CoSi2/Si/CdF2/CaF2) lattice-matche
d to Si substrate. In device operation, drain current from source (CoS
i2) to drain (CoSi2) through tunneling barriers (Si) and channel (CdF2
) is controlled by gate electric field applied to the barrier between
source and channel through gate insulator (CaF2). Theoretical analysis
shows that this transistor has characteristics similar to those of co
nventional metal- oxide-semiconductor field effect transistors even wi
th the channel lengths of 20 nm and 5 nm.