SUBPICOSECOND PHOTOCONDUCTIVITY OF IN0.53GA0.47AS - INTERVALLEY SCATTERING RATES OBSERVED VIA THZ SPECTROSCOPY

Citation
Se. Ralph et al., SUBPICOSECOND PHOTOCONDUCTIVITY OF IN0.53GA0.47AS - INTERVALLEY SCATTERING RATES OBSERVED VIA THZ SPECTROSCOPY, Physical review. B, Condensed matter, 54(8), 1996, pp. 5568-5573
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
8
Year of publication
1996
Pages
5568 - 5573
Database
ISI
SICI code
0163-1829(1996)54:8<5568:SPOI-I>2.0.ZU;2-S
Abstract
We report on the transient photoconductivity of hot carriers in undope d bulklike In0.53Ga0.47As observed via time-resolved terahertz far-inf rared spectroscopy. For very dilute photoexcitation densities of <1X10 (15) cm(-3) and an initial excess carrier energy of 630 meV, we find t hat electrons have an effective intervalley L-->Gamma return time of 3 .1 ps as measured via the increased electrical conductivity associated with Gamma electrons. In contrast, a total conductivity risetime of s imilar to 0.5 ps is observed for electrons with initial excess energy insufficient to cause intervalley scattering. The observed frequency d ependent conductivity is analyzed via the Drude theory, allowing the d etermination of the temporal dynamics of the mobility at dilute excita tion densities of similar to 1x10(14) cm(-3).