EFFICIENT, NUMERICALLY STABLE MULTIBAND K-CENTER-DOT-P TREATMENT OF QUANTUM TRANSPORT IN SEMICONDUCTOR HETEROSTRUCTURES

We present a method for treating quantum transport in heterostructures using multiband k . p theory. The method is similar to the multiband quantum transmitting boundary method developed earlier for use with mu ltiband tight-binding band structure models, being efficient, numerica lly stable, and easy to implement. It also has the advantages of being intuitive to use and easy to generalize to include magnetic field and strain effects. We have applied this method to hole tunneling in prot otypical p-type GaAs/AlAs double-barrier structure.