INTERFACIAL ROUGHNESS AND RELATED GROWTH MECHANISMS IN SPUTTERED W SIMULTILAYERS/

We have studied interfacial roughness in amorphous W/Si multilayers gr own by rf sputtering at different deposition parameters by cross-secti onal transmission electron microscopy, x-ray reflectivity, and diffuse x-ray scattering. The diffuse scattering intensity has been recorded in an unprecedented wide range of parallel momentum transfer, 5x10(-4) Angstrom(-1)less than or equal to q(parallel to)less than or equal to 1 Angstrom(-1), giving access to the height-height self- and cross-co rrelation functions on lateral length scales between a few Angstrom an d 1 mu m. The results are compared for the different samples and discu ssed in view of the deposition parameters.