T. Salditt et al., INTERFACIAL ROUGHNESS AND RELATED GROWTH MECHANISMS IN SPUTTERED W SIMULTILAYERS/, Physical review. B, Condensed matter, 54(8), 1996, pp. 5860-5872
We have studied interfacial roughness in amorphous W/Si multilayers gr
own by rf sputtering at different deposition parameters by cross-secti
onal transmission electron microscopy, x-ray reflectivity, and diffuse
x-ray scattering. The diffuse scattering intensity has been recorded
in an unprecedented wide range of parallel momentum transfer, 5x10(-4)
Angstrom(-1)less than or equal to q(parallel to)less than or equal to
1 Angstrom(-1), giving access to the height-height self- and cross-co
rrelation functions on lateral length scales between a few Angstrom an
d 1 mu m. The results are compared for the different samples and discu
ssed in view of the deposition parameters.