THE MOS INVERSION LAYER AS MINORITY-CARRIER INJECTOR

In this paper we report the first experimental demonstration of the co ncept of MOS inversion layer injection (ILI) earlier proposed by us [3 ]-[5], The new physical concept is based on the use of a MOS inversion layer as a minority carrier injector as part of a dynamic junction, T he carrier injection of such a junction is entirely controlled by the MOS gate, Moreover, when the gate potential is reduced under the MOS t hreshold voltage, the junction collapses ensuring a very efficient tur n off mechanism. Based on this concept we propose two novel lateral th ree-terminal structures termed inversion layer diode (ILD) and inversi on layer bipolar transistor (ILBT), The concept of inversion layer inj ection can be applied in power devices where effective MOS gate contro l of the active junctions is important.