DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET

The DC and RF performance of a 0.25 mu m gatelength p-type SiGe modula tion-doped field-effect transistor (MODFET) is reported, The hole chan nel consists of compressively strained Si0.3Ge0.7 layer grown on a rel axed Si0.7Ge0.3 buffer on a Si substrate, The combination of high-hole mobility, low-gate leakage current, and improved ohmic contact metall ization results in an enhancement of the DC and RF performance. A maxi mum extrinsic transconductance (Gm(ext)) of 230 mS/mm was measured, A unity current gain cut-off frequency (fT) of 24 GHz and a maximum freq uency of oscillation (f(max)) of 37 GHz were obtained for these device s.