HIGH-BREAKDOWN-VOLTAGE GA0.51IN0.49P CHANNEL MESFETS GROWN BY GSMBE

The first Ga0.51In0.49P channel MESFET's grown on a (100) GaAs substra te by GSMBE have been fabricated, A high gate-to-drain break down volt age of 42 V with a high maximum current density (320 mA/mm) was achiev ed. This result demonstrates that high-breakdown voltage could be atta ined by using Ga(0.51)ln(0.49)P as the channel material, We also measu red a high-maximum oscillation frequency (f(max)) of 30 GHz for a 1.5 mu m gate-length device, This value is quite high compared with other high-breakdown-voltage GaAs MESFET's or MISFET's with the same gate le ngth.