MEASURED MICROWAVE-POWER PERFORMANCE OF ALGAN GAN MODFET/

We report the first microwave power measurement on GaN FET's, At 2 GHz , a class A output power density of 1.1 W/mm with a power added effici ency of 18.6% was obtained on al pm gate-length AlGaN/GaN MODFET, Math ematical simulation estimated that the transistor was operating at a c hannel temperature of 360 degrees C as a result of the poor thermal co nductivity of the sapphire substrate. Despite this serious heating pro blem, the power output density still rivals GaAs MESFET's.