SOLID SOURCE MOLECULAR-BEAM EPITAXY OF LOW-THRESHOLD STRAINED-LAYER 1.3-MU-M INASP GAINASP LASERS/

Authors
WAMSLEY CC KOCH MW WICKS GW
Citation
Cc. Wamsley et al., SOLID SOURCE MOLECULAR-BEAM EPITAXY OF LOW-THRESHOLD STRAINED-LAYER 1.3-MU-M INASP GAINASP LASERS/, Electronics Letters, 32(18), 1996, pp. 1674-1675
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
18
Year of publication
1996
Pages
1674 - 1675
Database
ISI
SICI code
0013-5194(1996)32:18<1674:SSMEOL>2.0.ZU;2-P
Abstract
A threshold current density of 270 A/cm(2) has been achieved for 2 mm long bred area lasers grown by solid source molecular beam epitaxy. Th ese are the lowest reported threshold current density 1.3 mu m lasers by any type of MBE growth technique.