LOW-NOISE 20GBIT S PHOTORECEIVER WITH DISTRIBUTED GAAS P-HEMT AMPLIFIERS/

Authors
LEGROS E MERRAR A BILLARD M JOLY C BLANCONNIER P
Citation
E. Legros et al., LOW-NOISE 20GBIT S PHOTORECEIVER WITH DISTRIBUTED GAAS P-HEMT AMPLIFIERS/, Electronics Letters, 32(18), 1996, pp. 1693-1694
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
18
Year of publication
1996
Pages
1693 - 1694
Database
ISI
SICI code
0013-5194(1996)32:18<1693:L2SPWD>2.0.ZU;2-8
Abstract
20 Gbit/s photoreceivers have been realised by cascading three distrib uted pre-amplifiers purposely designed and processed with a GaAs PHEMT 0.2 mu m gate length technology. The bandwidth is 16 GHz, and an aver age equivalent input noise as low as 12 pA/ root Hz up to 14 GHz is ob tained. The transimpedance is 63dB Omega.