DC ELECTROLUMINESCENCE FROM PECVD GROWN THIN-FILMS OF SILICON-RICH SILICA

Authors
TRWOGA PF KENYON AJ PITT CW
Citation
Pf. Trwoga et al., DC ELECTROLUMINESCENCE FROM PECVD GROWN THIN-FILMS OF SILICON-RICH SILICA, Electronics Letters, 32(18), 1996, pp. 1703-1704
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
18
Year of publication
1996
Pages
1703 - 1704
Database
ISI
SICI code
0013-5194(1996)32:18<1703:DEFPGT>2.0.ZU;2-O
Abstract
The authors report the fabrication of an electroluminescent MOS device using microclustered silicon in silica as the active layer. A DC elec troluminescence spectrum is shown and compared with photoluminescence from the same material. A current-voltage curve is presented which sho ws weak rectifying behaviour and is consistent with a space-charge lim ited structure with a high resistivity layer.