InP-based monolithically integrated pin/HBT photoreceiver arrays with
novel on-chip shielding, to reduce electrical and optical crosstalk, h
ave been fabricated and characterised. The photoreceiver array with on
-chip plated gold shielding demonstrated an adjacent-channel crosstalk
of < -40dB, which represents a 17dB reduction compared to -23dB in an
array without such shielding. The arrays demonstrate bandwidths of 5-
7GHz.