HIGH-POWER TOP-SURFACE EMITTING OXIDE CONFINED VERTICAL-CAVITY LASER-DIODES

Authors
GRABHERR M WEIGL B REINER G MICHALZIK R MILLER M EBELING KJ
Citation
M. Grabherr et al., HIGH-POWER TOP-SURFACE EMITTING OXIDE CONFINED VERTICAL-CAVITY LASER-DIODES, Electronics Letters, 32(18), 1996, pp. 1723-1724
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
18
Year of publication
1996
Pages
1723 - 1724
Database
ISI
SICI code
0013-5194(1996)32:18<1723:HTEOCV>2.0.ZU;2-8
Abstract
Large area MBE grown vertical-cavity surface emitting laser diodes (VC SELs) for high power emission at similar to 980nm wavelength have been fabricated. Top emitting devices of 146 mu m active diameter deliver 160mW at 20% wallplug efficiency and 180mW maximum output power in a j unction-up configuration.