HYDROGENATION OF GAAS MISFETS WITH AL2O3 AS THE GATE INSULATOR

Authors
PARIKH PA SHI SS IBETTSON J HU EL MISHRA UK
Citation
Pa. Parikh et al., HYDROGENATION OF GAAS MISFETS WITH AL2O3 AS THE GATE INSULATOR, Electronics Letters, 32(18), 1996, pp. 1724-1726
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
18
Year of publication
1996
Pages
1724 - 1726
Database
ISI
SICI code
0013-5194(1996)32:18<1724:HOGMWA>2.0.ZU;2-W
Abstract
A GaAs MISFET with Al2O3 formed by the wet oxidation of AlAs as thee g ate oxide is reported. It is observed that hydrogenation treatment pro ves to be effective in reducing the state density at the Al2O3/GaAs in terface due to removal of excess arsenic, which is a possible cause of interface states in this system.