SHALLOW AND LOW-RESISTIVE CONTACTS TO P-IN0.53GA0.47AS BASED ON PD SBAND PD/GE METALLIZATIONS/

Authors
RESSEL P PARK MH WANG LC KUPHAL E
Citation
P. Ressel et al., SHALLOW AND LOW-RESISTIVE CONTACTS TO P-IN0.53GA0.47AS BASED ON PD SBAND PD/GE METALLIZATIONS/, Electronics Letters, 32(18), 1996, pp. 1734-1735
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
18
Year of publication
1996
Pages
1734 - 1735
Database
ISI
SICI code
0013-5194(1996)32:18<1734:SALCTP>2.0.ZU;2-6
Abstract
Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 x 10(18)cm(-3 )) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/ Ge metallisation s, Low contact resistivities have been achieved, i.e. 3-7 x 10(-7)Ohm cm(2). These Au free metallisations exhibit superior surface and inter face morphology, with reaction depths well below 50nm.