DEPENDENCE OF INGAP INGAALP HETEROINTERFACE SMOOTHNESS ON SUBSTRATE MISORIENTATION/

InGaP/InGaAlP single quantum wells (SQWs) were fabricated on (100)GaAs substrates misoriented towards the [011] direction at different growt h rates. Photoluminescence (PL) measurements were carried out at 4.2 K to investigate dependence of the interface smoothness on substrate mi sorientation and growth rate for InGaP/InGaAlP SQWs. It has been found that the PL Linewidth of the SQWs becomes a minimum value in the 10 d egrees-40 degrees substrate misorientation range. This means the smoot hest InGaP/InGaAlP heterointerface can be obtained on these misoriente d substrates. It has also been found that the heterointerface can be i mproved with reduced growth rate. (C) 1996 American Institute of Physi cs.