He. Nilsson et al., MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN 4H-SIC USING A 2-BANDMODEL WITH MULTIPLE MINIMA, Journal of applied physics, 80(6), 1996, pp. 3365-3369
A Monte Carlo study of the high-field electron transport in 4H-SiC is
presented using a new analytic band model, The band model consists of
two analytical bands that include band bending at the Brillouin zone b
oundaries, The band bending is very important in 4H-SiC and SH-SiC and
has to be taken into account in order to have an accurate model at hi
gh electric fields. Numerical calculation of the density of states giv
en by the new model has been used in order to model the energy depende
nce of the scattering mechanisms accurately. The new model predicts a
lower saturation velocity in the c direction (peak velocity 1.8X10(7)
cm/s) than in perpendicular directions (peak velocity 2.1X10(7) cm/s).
This is directly related to the strong band bending in the c directio
n. This effect is also responsible for a much more pronounced velocity
peak in the c direction compared to perpendicular directions, In the
low-field region the mobility is higher in the c direction (mobility r
atio near 0.8), which is in agreement with experimental results, (C) 1
996 American Institute of Physics.