PARAMAGNETIC DEFECT SPIN CENTERS IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON-DIOXIDE FILMS

Citation
Y. Kamigaki et al., PARAMAGNETIC DEFECT SPIN CENTERS IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON-DIOXIDE FILMS, Journal of applied physics, 80(6), 1996, pp. 3430-3434
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
6
Year of publication
1996
Pages
3430 - 3434
Database
ISI
SICI code
0021-8979(1996)80:6<3430:PDSCIL>2.0.ZU;2-I
Abstract
We have found E'-like and amorphous-siliconlike (a-Si-like, . Si=Si-3) spin centers, as well as the well-known E' center (. Si=O-3) in low-p ressure chemical-vapor-deposited silicon-dioxide (LPCVD-SiO2) films, b y using the electron-spin-resonance method. The behavior of these para magnetic defect centers is studied and their origins are considered. A n E'-like center is terminated stably by either oxygen (O-2) or hydrog en (H-2) gas annealing. This E'-like center appears to be an intermedi ately generated defect but its bonding structure has not yet been iden tified. The a-Si-like center is terminated stably by high-temperature H-2 gas annealing. The a-Si-like center is thought to exist in the Si clusters in LPCVD-SiO2 films. We have also confirmed that the E' cente r is terminated stably by O-2 gas annealing. As a result, we conclude that both O-2 and H-2 gas annealing are necessary to reduce the quanti ty of paramagnetic defect centers in LPCVD-SiO2 films. (C) 1996 Americ an Institute of Physics.