TEXTURE OF THIN SILICON FILMS DEPOSITED F ROM SI2CL6

Thin Silicon films were deposited on non-crystal quartz glass substrat es by hydrogen reduction of Si2Cl6 at temperatures from 650 to 900 deg rees C in a horizontal hot wall reactor. The microstructures of the th in silicon films deposited under various experimental conditions were analyzed. The thin silicon films deposited from 750 to 850 degrees C h ave the highest degree of preferred (220) plane orientation with the [ 111] direction along the plane, and the cross-sectional morphology exh ibits a columnar structure. The experimental values of the lattice spa cing approach a value cited in JCPDS for the films deposited in a high er temperature range, In the lower temperature range the morphology of surface is flat and smooth, and in the higher temperature range the s urface becomes uneven remarkably.