OPTICAL DOPING OF MATERIALS BY ERBIUM ION-IMPLANTATION

Authors
PRIOLO F FRANZO G COFFA S POLMAN A SNOEKS E VANDENHOVEN GN LIBERTINO S LOMBARDO S CAMPISANO SU CARNERA A
Citation
F. Priolo et al., OPTICAL DOPING OF MATERIALS BY ERBIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 77-84
Citations number
32
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
116
Issue
1-4
Year of publication
1996
Pages
77 - 84
Database
ISI
SICI code
0168-583X(1996)116:1-4<77:ODOMBE>2.0.ZU;2-8
Abstract
The development of silicon compatible optoelectronics would require th e fabrication and integration of several optical functions such as wav eguides, amplifiers, signal processing components and light emitters i n silicon or on thin films deposited on silicon, In this paper the opt ical doping by erbium ion implantation of sodalime silica glass and si licon is presented with the aim to fabricate an amplifier and a light source operating at 1.5 mu m. The materials issues currently limiting the performances of these devices are analyzed in detail and the possi ble future developments are discussed.