LA-IMPLANTED, SN-IMPLANTED AND HF-IMPLANTED IN TIO2 SINGLE-CRYSTALS -LATTICE DISORDER AND LATTICE SITE LOCATION

Rutherford backscattering spectrometry and channeling were used to cha racterize the lattice disorder produced by implantation of La- Sn- and Hf-ions into TiO2 (rutile) single crystals and to determine their lat tice site location. La-ions were implanted at substrate temperatures, T-i between 77 and 1100 K. Two recovery stages of the lattice disorder between 300 and 500 K and above 700 K have been observed. These stage s are about 200 K lower than those observed for subsequent isochronal annealing of an amorphous TiO2 layer, This reveals the influence of ra diation enhanced annealing, While for the as-implanted La no regular l attice site occupation was observed, high substitutional components of 100% and 95% have been measured for Sn and Hf, respectively, which ar e isoelectronic to Ti. Preliminary results for Sn and Hf, indicate tha t the size mismatch energy plays an important role for the lattice sit e occupation.