IMPLANTATION OF REACTIVE AND UNREACTIVE IONS IN SILICATES AND ICES

Citation
G. Strazzulla et al., IMPLANTATION OF REACTIVE AND UNREACTIVE IONS IN SILICATES AND ICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 289-293
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
116
Issue
1-4
Year of publication
1996
Pages
289 - 293
Database
ISI
SICI code
0168-583X(1996)116:1-4<289:IORAUI>2.0.ZU;2-U
Abstract
We present selected results of a series of experiments, performed in o ur laboratory, on the implantation of similar or equal to 1 keV/amu re active (H, C, N, O) and unreactive (He, Ar) ions into silicon, silicat es and frozen gases. The purpose to irradiate Che last two samples, is to simulate solar wind ion implantation on planetary objects. In part icular we investigated on the possibility of producing chemical bonds between the projectile and the target atoms searching for the appearan ce of characteristic IR bands. When the impinging ion is reactive (H, C, N, O) we found several cases of newly produced molecular species th at include the projectile.