SPECTROPHOTOMETRY OF ION-IMPLANTED SILICON-CARBIDE THIN-FILMS

Authors
LAINE AD MEZZASALMA AM RIZZO S MONDIO G
Citation
Ad. Laine et al., SPECTROPHOTOMETRY OF ION-IMPLANTED SILICON-CARBIDE THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 338-341
Citations number
18
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
116
Issue
1-4
Year of publication
1996
Pages
338 - 341
Database
ISI
SICI code
0168-583X(1996)116:1-4<338:SOIST>2.0.ZU;2-1
Abstract
The optical properties of thin films of silicon carbide prepared by th e implantation of C2H2+ ions into silicon evaporated onto a sapphire s ubstrate and subsequently annealed at three different temperatures, 50 0, 600 and 800 degrees C have been studied using spectrophotometry. Th e real and imaginary parts of the dielectric constant show systematic variations which can be attributed to the degree of amorphisation whic h is in turn related to the annealing temperature.