SILICON-OXIDE THIN-FILMS OBTAINED BY AR-TEMPERATURE( BOMBARDMENT OF SI(100) IN OXYGEN ATMOSPHERE AT ROOM)

We report the formation of silicon oxide thin films obtained at room t emperature by Ar+ bombardment of Si(100) wafers in partial oxygen atmo sphere, The ion bombardment was done in the energy range E(b) - 100-10 00 eV, with Ar partial pressure P-Ar = 1 x 10(-4) Torr, and O-2 pressu re ranging in between 7 x 10(-7) and 7 x 10(-6) Torr. Samples have bee n investigated by core level X-ray Photoelectron Spectroscopy (XPS) us ing monochromatized Al K-a radiation with 0.28 eV total energy resolut ion. The formation of SiO2, in particular, was studied by Si2p core le vel spectra, Fitting of the experimental data has been done for a quan titative analysis of the SiO, thickness. Homogeneous SiO2 top layers u p to 50 Angstrom thick were obtained. The role of the ion beam energy, O-2 pressure and irradiation time is investigated.