P. Bonnefond et al., THERMAL-DECOMPOSITION OF V(NET(2))(4) IN AN MOCVD REACTOR - A LOW-TEMPERATURE ROUTE TO VANADIUM CARBONITRIDE COATINGS, Journal of materials chemistry, 6(9), 1996, pp. 1501-1506
Carbon-rich vanadium carbonitride films have been grown by MOCVD at lo
w temperature using the tetrakis (diethylamido) vanadium complex V(NEt
(2))(4) as a single-source precursor. The main volatile byproducts for
med during its thermal decomposition were identified by NMR and on-lin
e mass spectrometric analyses. Under the growth conditions, an equimol
ecular ratio of HNEt(2) and EtN=CHMe was found in addition to CH3CN an
d C2H4. From these results, an elimination mechanism of the NEt(2) lig
ands is proposed. It accounts for their high lability and therefore th
e low nitrogen content of the films. The possible origin of the incorp
oration of the metalloid elements is also discussed.