THERMAL-DECOMPOSITION OF V(NET(2))(4) IN AN MOCVD REACTOR - A LOW-TEMPERATURE ROUTE TO VANADIUM CARBONITRIDE COATINGS

Citation
P. Bonnefond et al., THERMAL-DECOMPOSITION OF V(NET(2))(4) IN AN MOCVD REACTOR - A LOW-TEMPERATURE ROUTE TO VANADIUM CARBONITRIDE COATINGS, Journal of materials chemistry, 6(9), 1996, pp. 1501-1506
Citations number
37
Categorie Soggetti
Chemistry Physical","Material Science
ISSN journal
09599428
Volume
6
Issue
9
Year of publication
1996
Pages
1501 - 1506
Database
ISI
SICI code
0959-9428(1996)6:9<1501:TOVIAM>2.0.ZU;2-U
Abstract
Carbon-rich vanadium carbonitride films have been grown by MOCVD at lo w temperature using the tetrakis (diethylamido) vanadium complex V(NEt (2))(4) as a single-source precursor. The main volatile byproducts for med during its thermal decomposition were identified by NMR and on-lin e mass spectrometric analyses. Under the growth conditions, an equimol ecular ratio of HNEt(2) and EtN=CHMe was found in addition to CH3CN an d C2H4. From these results, an elimination mechanism of the NEt(2) lig ands is proposed. It accounts for their high lability and therefore th e low nitrogen content of the films. The possible origin of the incorp oration of the metalloid elements is also discussed.