ELECTRICAL-PROPERTIES OF METAL, LANGMUIR-BLODGETT (POLYMERALDINE BASE) LAYER, METAL DEVICES

Metal-insulator-metal structures have been fabricated by sandwiching p olyemeraldine base Langmuir-Blodgett (LB) films between metals like si lver and indium vacuum-deposited onto indium-tin-oxide (ITO) glass. Th ese devices have been found to exhibit insulating properties in the ab sence of a metal oxide layer. Current (I)-voltage (V) and capacitance (C)-voltage (V) measurements have been carried out on such devices. It is seen that these devices show rectification behavior at about 3 V f or both forward and reverse bias conditions. However, at low voltages, nonlinear and asymmetric behaviors have been observed, whereas plot o f log 1 versus V-1/4 indicates linear characteristics at high fields. The value of the barrier height has been found to be about 1.2 V in ag reement with literature, implying Schottky behavior. (C) 1997 John Wil ey & Sons, Inc.