RF VACUUM MICROELECTRONICS

The advent of high-performance gated vacuum emitters will have a stron g impact on RF source technology. Gated vacuum emitters, typified by t he field emitter array (FEA) combining the advantages of electron tran sport in vacuum with those of solid-state micro-fabrication, will enab le the development of new classes of density modulated RF sources. Lar ge-scale devices related to established power tube types as well as on -chip, integrable micro-devices can be anticipated. When developed the se devices may offer the system designer distinct advantages with resp ect to power density efficiency, and cost. Although recent advances se rve to highlight the potential for the development of FEA-based source s, significant challenges must be overcome before a new RF source tech nology becomes available.