K. Novakova et al., PREPARATION AND PROPERTIES OF PB-DOPED AND V-DOPED BI-BASED SUPERCONDUCTORS, Superconductor science and technology, 9(9), 1996, pp. 761-765
The effect of the stochiometric replacement of Pb and Pi by V in the B
i-Sr-Ca-Cu-O system has been studied. The content of Pi, Pb and V in t
he BiaPbbVcSr4Ca5 Cu7Ox was altered according to the formula: a + b c = 4 (a = 2.6-3.6, b = 0-0.8, c = 0-0.6). The influence of the dopant
on the properties of the samples was detected by XRD analysis, by the
measurement of the electrical resistivity, critical current density a
nd magnetic susceptibility. The increasing amount of V on account of P
b led to the decreasing content of the 2223 phase and to the deteriora
tion of the superconducting properties. On the other hand, the samples
with V substituting Pi in material with a constant concentration of P
b (b = 0.8) reveal improved intergrain boundaries and a large content
of the 2223 phase. The XRD analysis confirmed a decrease of the lattic
e parameter c of the 2223 phase from 37.173 nm to 37.079 nm for increa
sing amount of V in these samples. An unknown phase detected on x-ray
diffraction patterns (Cu K-alpha) was attributed to the presence of V.