SCANNING-TUNNELING-MICROSCOPY OF SEMICONDUCTOR SURFACES

This review describes advances in understanding the structural, electr onic, and chemical properties of clean low-index semiconductor surface s during the first decade following the advent of the scanning tunneli ng microscope (STM). The principles of STM are discussed together with the instrumentation required to perform STM measurements on semicondu ctor surfaces in ultrahigh vacuum. A comprehensive review of the struc tures of the clean, low-index surfaces of elemental and compound semic onductors is presented. These structures are discussed using the gener al physical principles that determine them.