NUCLEATION AND BULK FILM GROWTH-KINETICS OF NANOCRYSTALLINE DIAMOND PREPARED BY MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION ON SILICON SUBSTRATES

Citation
Jc. Lee et al., NUCLEATION AND BULK FILM GROWTH-KINETICS OF NANOCRYSTALLINE DIAMOND PREPARED BY MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION ON SILICON SUBSTRATES, Applied physics letters, 69(12), 1996, pp. 1716-1718
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
12
Year of publication
1996
Pages
1716 - 1718
Database
ISI
SICI code
0003-6951(1996)69:12<1716:NABFGO>2.0.ZU;2-2
Abstract
Real time spectroscopic ellipsometry has been applied to characterize the substrate temperature (T) dependence of the deposition rates for n anocrystalline diamond thin films prepared by microwave plasma-enhance d chemical vapor deposition on seeded Si substrates. With the real tim e capability, it is possible to determine the rates at which the diamo nd mass thickness (i.e., volume per area) increases during the early n ucleation and bulk film growth regimes. The increases in the nucleatin g and bulk diamond growth rates with T for 400 < T < 800 degrees C are consistent with activation energies of similar to 17 and 8 kcal/mol, respectively. The results reported here provide insights into the natu re of the low-T growth rate limitations for diamond films on nondiamon d substrates. (C) 1996 American Institute of Physics.