NEW ASPECTS OF COPPER DIFFUSION IN SEMIINSULATING GALLIUM-ARSENIDE

Authors
GRIEHL S HERMS M KLOBER J NIKLAS JR SIEGEL W
Citation
S. Griehl et al., NEW ASPECTS OF COPPER DIFFUSION IN SEMIINSULATING GALLIUM-ARSENIDE, Applied physics letters, 69(12), 1996, pp. 1767-1769
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
12
Year of publication
1996
Pages
1767 - 1769
Database
ISI
SICI code
0003-6951(1996)69:12<1767:NAOCDI>2.0.ZU;2-3
Abstract
The diffusion of copper in semi-insulating liquid-encapsulated-Czochra lski-grown gallium arsenide at 800 degrees C was examined by photolumi nescence, photoetching, secondary ion mass spectroscopy, and temperatu re dependent Hall measurements. A diffusion rate of 4.5 x 10(-6) cm(2) s(-1) obtained. It could be estimated that the diffusion takes place predominantly by substitution on lattice sites. Diffusing copper migra tes preferentially along the walls of the dislocation cellular network . (C) 1996 American Institute of Physics.