M. Urban et al., A PRECISE NEW METHOD TO EVALUATE MONTE-CARLO SIMULATIONS OF ELECTRON-TRANSPORT IN SEMICONDUCTORS, Applied physics letters, 69(12), 1996, pp. 1776-1778
Monte Carlo simulations of the electron drift response to an ac-electr
ic field are used to calculate the power dependent third harmonic gene
ration efficiency for far-infrared radiation. The results are compared
with far-infrared frequency tripling experiments. It is shown that th
e nonlinear optical properties are much more sensitive to parameter ch
anges in the Monte Carlo simulation than conventional drift velocity r
esults. Hence, this is a sensitive method to test Monte Carlo transpor
t simulations. (C) 1996 American Institute of Physics.