A PRECISE NEW METHOD TO EVALUATE MONTE-CARLO SIMULATIONS OF ELECTRON-TRANSPORT IN SEMICONDUCTORS

Authors
URBAN M SIEGRIST MR ASADAUSKAS L RAGUOTIS R BRAZIS R
Citation
M. Urban et al., A PRECISE NEW METHOD TO EVALUATE MONTE-CARLO SIMULATIONS OF ELECTRON-TRANSPORT IN SEMICONDUCTORS, Applied physics letters, 69(12), 1996, pp. 1776-1778
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
12
Year of publication
1996
Pages
1776 - 1778
Database
ISI
SICI code
0003-6951(1996)69:12<1776:APNMTE>2.0.ZU;2-A
Abstract
Monte Carlo simulations of the electron drift response to an ac-electr ic field are used to calculate the power dependent third harmonic gene ration efficiency for far-infrared radiation. The results are compared with far-infrared frequency tripling experiments. It is shown that th e nonlinear optical properties are much more sensitive to parameter ch anges in the Monte Carlo simulation than conventional drift velocity r esults. Hence, this is a sensitive method to test Monte Carlo transpor t simulations. (C) 1996 American Institute of Physics.