MECHANISM OF NITROGEN COIMPLANT FOR SUPPRESSING BORON PENETRATION IN P(-POLYCRYSTALLINE SILICON GATE OF P METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR())

The mechanism of the nitrogen co-implant to suppress the boron penetra tion in p(+)-polycrystalline silicon gate has been investigated. The n itrogen coimplant with the BF, combines with the boron to form a B-N c omplex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show im proved electrical properties. (C) 1996 American Institute of Physics.