CYCLOTRON-TRANSITION LINEWIDTHS IN GE WITH ANISOTROPIC SCATTERING

Utilizing the state-independent projection technique, we obtain a gene ral formula for the cyclotron-transition linewidth for anisotropic def ormation potential phonon scattering. The formula is applied to calcul ate the width in Ge at low temperatures. It is shown that the transiti on between the two lowest adjacent Landau levels makes the most contri bution to the temperature and the magnetic field dependence of the wid th, and the result agrees better with the experiment as the higher-ord er contributions are included. The width increases with the magnetic f ield, implying that the interaction of electrons with acoustic phonons increases with the field.