PREPARATION OF COPPER SULFIDE THIN-LAYERS BY A SINGLE-SOURCE MOCVD PROCESS

Authors
NOMURA R MIYAWAKI K TOYOSAKI T MATSUDA H
Citation
R. Nomura et al., PREPARATION OF COPPER SULFIDE THIN-LAYERS BY A SINGLE-SOURCE MOCVD PROCESS, CHEMICAL VAPOR DEPOSITION, 2(5), 1996, pp. 174
Citations number
34
Categorie Soggetti
Materials Science, Coatings & Films","Materials Sciences, Composites",Electrochemistry,"Physics, Condensed Matter
Journal title
CHEMICAL VAPOR DEPOSITION → ACNP
ISSN journal
09481907
Volume
2
Issue
5
Year of publication
1996
Database
ISI
SICI code
0948-1907(1996)2:5<174:POCSTB>2.0.ZU;2-Q
Abstract
Communication: Metal dithiocarbamate complexes are also potential cand idates for the CVD of metal sulfides (see previous article). This pape r reports on an investigation by mass fragmentation initiated by elect ron impact of the vapor phase decomposition of a copper complex in ord er to clarify the decomposition route and to assess its suitability as a single-source precursor for the MOCVD growth of cuprous sulfide. Re producible growth of crystalline layers was found and the results sugg ested a two-step growth mode.