CHEMICAL-VAPOR-DEPOSITION OF GALLIUM SELENIDE AND INDIUM SELENIDE NANOPARTICLES

Authors
STOLL SL GILLAN EG BARRON AR
Citation
Sl. Stoll et al., CHEMICAL-VAPOR-DEPOSITION OF GALLIUM SELENIDE AND INDIUM SELENIDE NANOPARTICLES, CHEMICAL VAPOR DEPOSITION, 2(5), 1996, pp. 182
Citations number
40
Categorie Soggetti
Materials Science, Coatings & Films","Materials Sciences, Composites",Electrochemistry,"Physics, Condensed Matter
Journal title
CHEMICAL VAPOR DEPOSITION → ACNP
ISSN journal
09481907
Volume
2
Issue
5
Year of publication
1996
Database
ISI
SICI code
0948-1907(1996)2:5<182:COGSAI>2.0.ZU;2-W
Abstract
Communication: Nanometer-sized structures can exhibit quite different properties from those of their macroscopic forms. In this paper it is reported that, under suitable conditions. well-defined nanoparticles o f InSe and GaSe may be obtained from the vapor phase thermolysis of he terocubane molecules. For example, InSe grown from [(EtMe(2)C)InSe](4) consists of spheres with a mean diameter of 88 nm (standard deviation s.d. = 30 nm), while GaSe grown front [((t)Bu)GaSe](4) produces pseud o-spherical nanoparticles with a mean diameter of 42 nm (s.d. = 13 nm) . Possible controlling mechanisms are discussed.